IBM has developed a technique that enables it to create high performance integrated circuits (ICs) on plastic substrates.
Previously, flexible circuits have had a limited performance threshold due to plastic substrates being incompatible with the harsh processes required to make high-performance CMOS devices.
However, IBM claims to have produced plastic SRAM. The extremely thin silicon on insulator (ETSOI) devices had a body thickness of just 60 angstroms.
The aim is to eventually develop wearable electronics, ultra lightweight biomedical devices and sensors.